PLASMA PARAMETERS AND SiO2 ETCHING KINETICS IN C4F8 + Ar + O2 GAS MIXTURE
نویسندگان
چکیده
منابع مشابه
Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma.
The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO2 using a steady-state Ar plasma, periodic injection of a defined number of C4F8 molecules, and synchronized plasma-based Ar+ ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase ch...
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We report the effect of N2 addition to C4F8 and C4F8 /Ar discharges on plasma etching rates of organosilicate glass ~OSG! and etch stop layer materials (Si3N4 and SiC!, and the results of surface chemistry studies performed in parallel. N2 addition exhibits different effects in C4F8 and C4F8 /Ar plasmas, which may be explained by a higher plasma density, electron temperature, and possibly, the ...
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With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si ...
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متن کاملProperties of C 4 F 8 inductively coupled plasmas . I . Studies of Ar Õ c - C 4 F 8 magnetically confined plasmas for etching of SiO 2
Gas mixtures containing c-C4F8 /Ar are commonly used for the plasma etching of dielectric materials such as SiO2 . To quantify the dependence of fundamental plasma parameters of systems using these mixtures, inductively coupled plasmas in the pressure range of 6–20 mTorr, with and without magnetic confinement, were investigated. Measurements were also made in pure Ar and O2 to provide a compari...
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ژورنال
عنوان ژورنال: IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA KHIMICHESKAYA TEKHNOLOGIYA
سال: 2020
ISSN: 2500-3070,0579-2991
DOI: 10.6060/ivkkt.20206306.6163